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| Ordering number : ENA0671 FSS245 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS245 Features * * * General-Purpose Switching Device Applications Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle1% Duty cycle1% Mounted on a ceramic board (1200mm20.8mm), PW10s Conditions Ratings 45 20 11 14 44 2.9 150 --55 to +150 Unit V V A A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=11A ID=11A, VGS=10V ID=5.5A, VGS=4V Ratings min 45 1 10 1.2 8.4 14 10 16 13 23 2.6 typ max Unit V A A V S m m Marking : S245 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13107PA TI IM TC-00000396 No. A0671-1/4 FSS245 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=24V, VGS=10V, ID=11A VDS=24V, VGS=10V, ID=11A VDS=24V, VGS=10V, ID=11A IS=11A, VGS=0V Ratings min typ 3020 350 265 30 150 170 115 54 9 10 0.82 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7005-002 Switching Time Test Circuit VDD=24V 8 5 10V 0V 6.0 0.3 VIN ID=11A RL=2.18 VIN 4.4 D G PW=10s D.C.1% VOUT 1 4 0.43 1.5 1.8 MAX 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 P.G 50 S FSS245 0.595 1.27 0.1 11 ID -- VDS 3.5V 6.0V 3.0V 16 ID -- VGS VDS=10V 10 9 4.0V Drain Current, ID -- A 10.0V 8 7 6 5 4 3 2 1 0 0 Drain Current, ID -- A 12 4.5V 8 0 0.2 0.4 0.6 0.8 1.0 IT12043 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V Ta= 7 --25 C VGS=2.5V 4 5C 25C IT12044 No. A0671-2/4 FSS245 80 RDS(on) -- VGS Ta=25C 30 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- 70 60 50 40 25 20 15 11A 30 20 A =5.5 , ID =4V VGS 0A =11. 0V, I D =1 VGS 10 ID=5.5A 10 0 2 3 4 5 6 7 8 9 10 IT12045 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 Ambient Temperature, Ta -- C 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT12046 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 2 10 7 5 3 2 C -25 =C Tc 75 C 25 Source Current, IS -- A Tc= 75 C 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 7 5 3 2 0.001 0.2 0.4 0.6 --25 C 25C 0.8 1.0 1.2 IT12048 Drain Current, ID -- A 5 3 IT12047 7 SW Time -- ID VDD=24V td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V 5 3 Switching Time, SW Time -- ns Ciss Ciss, Coss, Crss -- pF 2 2 100 7 5 tf 1000 7 5 td(on) 3 2 tr Coss 3 2 Crss 10 0.1 100 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 10 15 20 25 30 35 40 45 Drain Current, ID -- A 10 9 IT12049 100 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT12050 VGS -- Qg ASO IDP=44A ID=11A 10 1m 10 0m s ms Gate-to-Source Voltage, VGS -- V VDS=10V ID=11A 10s s 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 IT12051 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 op Operation in era tio this area is n limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) 5 7 0.1 23 5 7 1.0 23 5 7 10 23 DC 10 s 0.01 0.01 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT12052 No. A0671-3/4 FSS245 3.5 PD -- Ta M ou Allowable Power Dissipation, PD -- W 3.0 2.9 2.5 nt ed on ac er 2.0 am ic bo ar 1.5 d( 12 00 m 1.0 m2 0 .8m m 0.5 0 0 20 40 60 80 100 120 ), PW 1 0s 160 140 Ambient Temperature, Ta -- C IT12053 Note on usage : Since the FSS245 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0671-4/4 |
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